This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine(CuPc) based diode.A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type Ag/CuPc/Au Schottky diode.The current-voltage characteristics were measured at room temperature under dark conditions.The barrier height was calculated as 1.05 eV.The values of mobility and conductivity was found to be 1.74×10~(-9) cm~2/(V·s) and 5.5×10~(-6)Ω~(-1)·cm~(-1),respectively.At low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at higher voltages. This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine (CuPc) based diode. A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type The current-voltage characteristics were measured at room temperature under dark conditions. The barrier height was calculated as 1.05 eV. The values ​​of mobility and conductivity were found to be 1.74 × 10 ~ (-9) cm ~ 2 / (V · s) and 5.5 × 10 -6 Ω -1 (-1) · cm -1, respectively. At low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at more voltages.