用Raman散射技术分析了 1 71 .2MeVS9+和 1 2 0keV的H+离子在C60 薄膜中电子能损引起的效应 ,即晶态→非晶态转变 .在H+离子辐照的情况下 ,发现电子能损有明显的退火效应 ,致使C60 晶态→非晶态转变过程中 ,经过一个石墨化的中间过程 .而在S9+离子辐照的情况下 ,电子能损的破坏作用超过了退火效应 ,不存在石墨化的中间过程 . The Raman scattering technique was used to analyze the effect of electron energy loss of 1 71 .2 MeVS9 + and 1 2 0keV H + ions in the C60 thin film, ie, the transition from crystalline state to amorphous state. In the case of H + ion irradiation, There is obvious annealing effect, which leads to a graphitized intermediate process during the transition from C60 to amorphous, whereas in the case of S9 + ion irradiation, the damage of electron loss exceeds the annealing effect and there is no graphite The middle of the process.