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应变硅技术通过在沟道区引入适当的应变,达到提高载流子迁移率、改善MOS器件性能的目的。利用有限元法,研究了一种基于SGOI与氮化硅CESL应变结构的新型应变硅NMOS-FET。结果表明,与采用单一的SGOI或CESL结构相比,两者共同作用下的新结构能更有效地提高沟道应变。增加氮化硅薄膜的本征应力、减小应变硅层厚度、适当提高锗组分,均能有效增加硅沟道区的应变量。采用有限元分析进行的模拟研究,可弥补实验测量的不足,为纳米级应变硅器件的设计和制造提供参考。
Strain silicon technology by introducing the appropriate strain in the channel region, to improve the carrier mobility and improve the performance of MOS devices. A new type of strained silicon NMOS-FET based on SGOI and silicon nitride CESL strain structure was studied by finite element method. The results show that, compared with the single SGOI or CESL structure, the new structure under the combined effect of the two can effectively improve the channel strain. Increasing the intrinsic stress of the silicon nitride film, reducing the thickness of the strained silicon layer and properly increasing the germanium component can effectively increase the strain of the silicon channel region. Finite element analysis of the simulation study can make up for the lack of experimental measurements for the design and manufacture of nanoscale strained silicon devices provide a reference.