论文部分内容阅读
化学气相淀积金刚石薄膜过程中 ,CH3 和C2 H2 是金刚石生长的主要前驱基团。C2 H2 与CH3 浓度比 ( [C2 H2 ]/[CH3 ])的变化将影响金刚石薄膜的生长取向。用非平衡热力学耦合模型计算了C H体系CVD金刚石薄膜生长过程中C2 H2 浓度和CH3浓度随淀积条件的变化 ,并进一步获得了 [C2 H2 ]/[CH3 ]随衬底温度和CH4浓度的变化关系 ,从理论上探讨了金刚石薄膜 ( 1 1 1 )面和 ( 1 0 0 )面取向生长与淀积条件的关系。在衬底温度和CH4浓度由低到高的变化过程中 ,[C2 H2 ]/[CH3 ]逐渐升高 ,导致金刚石薄膜的形貌从 ( 1 1 1 )晶面转为 ( 1 0 0 )晶面。
During chemical vapor deposition of diamond films, CH3 and C2H2 are the predominant precursors of diamond growth. The change of the concentration ratio of C2 H2 to CH3 ([C2 H2] / [CH3]) will affect the growth orientation of diamond films. The variation of C2H2 concentration and CH3 concentration with the deposition conditions in CVD diamond film growth of CH system was calculated by the non-equilibrium thermodynamic coupling model and the change of [C2H2] / [CH3] with substrate temperature and CH4 concentration was further obtained The relationship between (1 1 1) plane and (100) plane orientation and deposition conditions of diamond films was theoretically investigated. The [C2 H2] / [CH3] gradually increases during the process of substrate temperature and CH4 concentration changing from low to high, resulting in the morphology of the diamond film changing from (1 1 1) plane to (1 0 0) plane surface.