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用改进的离子束增强沉积方法和恰当的退火从V2 O5粉末直接制备了VO2 多晶薄膜 .实验测试表明 ,薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好 ,薄膜的电阻温度系数 (TCR)最高可达 4 2 3% K .从成膜机理出发 ,较详细地讨论了离子束增强沉积VO2 多晶薄膜的TCR高于VOx 薄膜的TCR的原因 .分析认为 ,单一取向的VO2 结构使薄膜晶粒具有较高的电导激活能 ,致密的薄膜结构减少了氧空位和晶界宽度 ,使离子束增强沉积VO2 多晶薄膜结构比其他方法制备的VOx 薄膜更接近于单晶VO2 是其具有高TCR的原因
VO2 polycrystalline thin films were prepared directly from V2 O5 powders by improved ion beam enhanced deposition method and proper annealing.The experimental results show that the thin films have a single orientation with significant phase transition characteristics, compact structure, strong interface bonding and good process performance, (TCR) is up to 423% K. Based on the film formation mechanism, the reason why the TCR of ion-beam-enhanced VO2 polycrystalline thin film is higher than that of VOx thin film is discussed in detail.Analysis shows that the single The oriented VO2 structure makes the crystal grain have a high conductance activation energy. The dense film structure reduces the oxygen vacancies and the grain boundary width. The VO2 polycrystalline thin film structure enhanced by ion beam deposition is more similar to that of VOx films prepared by other methods Crystal VO2 is the reason it has a high TCR