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通过对ETC公司的商用256kb和1Mb CMOS SRAM器件在不同偏置条件(包括静态偏置和动态读写偏置)下进行电离辐射效应的研究,获得了SRAM器件电气参数和功能出错数随总剂量的响应关系。实验结果表明,功耗电流随累积剂量的增加变化明显,可以作为表征SRAM辐射损伤的敏感参数,但功能出错数与功耗电流的变化不同步,与功耗电流没有必然联系,原因是功能出错主要由栅氧阈值电压负漂引起,而功耗电流的增加主要由栅氧和场氧阈值电压负漂造成的漏电引起。
By studying the effect of ionizing radiation on ETC’s commercial 256kb and 1Mb CMOS SRAM devices under different bias conditions (including static bias and dynamic read-write bias), the electrical parameters and the number of functional errors of SRAM devices are obtained with the total dose The response. The experimental results show that the power consumption current changes obviously with the increase of accumulated dose, which can be used as a sensitive parameter to characterize the radiation damage of SRAM. However, the number of functional errors is not in synchronization with the change of power consumption current, which is not necessarily related to the power consumption current. Mainly by the gate voltage threshold voltage drift caused by the increase in current consumption is mainly caused by the gate oxide and field oxygen threshold voltage drift caused by leakage.