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本文测定了磁控溅射Ｔｉ镀层与金刚石界面反应形成ＴｉＣ层的厚度，镀层与金刚石界面结合强度随热处理时间的变化关系；用ＳＥＭ观察了界面反应形成的ＴｉＣ在金刚石表面上的分布特征；讨论了镀层金刚石界面结合强度与ＴｉＣ显微结构特征的相关性。结果表明，镀层与金刚石界面反应首先在金刚石表面外延生成点状ＴｉＣ，点状ＴｉＣ沿镀层与金刚石界面生长，最后形成连续的ＴｉＣ薄膜，从而达到Ｔｉ镀层与金刚石界面最大结合强度。
In this paper, the thickness of TiC layer formed by reactive magnetron sputtering Ti coating and diamond interface was measured, and the bond strength between coating and diamond interface changed with the time of heat treatment. The distribution characteristics of TiC formed on diamond surface by SEM were observed. The correlation between the bonding strength of coating diamond interface and the microstructure of TiC was studied. The results show that the interface between the coating and the diamond first epitaxially generates point-like TiC on the surface of the diamond, and the point-like TiC grows along the interface between the coating and the diamond. Finally, a continuous TiC film is formed so as to achieve the maximum bonding strength between the Ti coating and the diamond interface.