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采用化学气相沉积法(CVD)以酞菁铜(CuPc)为催化剂、甲烷为碳源在二氧化硅(SiO_2)基底上合成了碳纳米管薄膜(CNTs),经过扫描电镜(SEM)表征发现,合成的碳纳米管外径较大,范围约在140~280nm,长度约在10μm以上。拉曼光谱分析表明合成的碳纳米管为无定形(α-CNTs)结构。通过透射电镜(TEM)可以看出所制备α-CNTs管内中空,管壁厚度不均匀,约为20~100nm。采用二极管结构,在真空室中真空度为2×10-4 Pa时进行了场发射特性测试,测试结果表明SiO_2(α-CNTs)薄膜的场发射开启场强为1.05V/μm。通过计算得出薄膜的场增强因子为1.32×104,结果表明SiO_2(α-CNTs)具有良好的场发射特性。
Carbon nanotubes (CNTs) were synthesized by chemical vapor deposition (CVD) using copper phthalocyanine (CuPc) as a catalyst and methane as a carbon source on a silicon dioxide (SiO 2) substrate. Scanning electron microscopy (SEM) The synthesized carbon nanotubes have a large outer diameter of about 140 to 280 nm and a length of about 10 μm or more. Raman spectroscopy showed that the synthesized carbon nanotubes were amorphous (α-CNTs). The transmission electron microscopy (TEM) shows that the prepared α-CNTs tubes are hollow and the thickness of the tube wall is not uniform, which is about 20-100 nm. The field emission characteristics of the SiO 2 (α-CNTs) thin film were measured by using a diode structure with a vacuum of 2 × 10-4 Pa in a vacuum chamber. The field emission field strength of the SiO_2 (α-CNTs) film was 1.05V / μm. The calculated field enhancement factor of the film is 1.32 × 104. The results show that SiO_2 (α-CNTs) has good field emission characteristics.