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本文评述HgCdTe红外探测器焦平面工艺的进展,并对其最大潜力作了估价。 HgCdTe是可调禁带的合金半导体材料,可作成波段在2～14微米内的红外探测器。光导HgCdTe探测器阵列现在已被许多红外系统所采用。霍尼威尔公司和其他一些地方正进一步提高HgCdTe光电二极管的工艺水平,而成结技术对复杂的多元焦平面特别适合。本文小结了2～14微米光谱范围内红外焦平面工艺的进展及其可获得的最佳性能。文中评述了HgCdTe光电二极管与硅电荷耦合器件集成多元两维镶嵌阵列焦平面的方案和进展。最后,对HgCdTe红外电荷传输镶嵌焦平面的潜力作了评价。
This article reviews the progress of the focal plane technology for the HgCdTe infrared detector and evaluates its maximum potential. HgCdTe is a tunable bandgap alloy semiconductor material that can be used as an infrared detector in the band 2 to 14 microns. Lightguide HgCdTe detector arrays are now used by many infrared systems. Honeywell and others are further improving the HgCdTe photodiode process, which is particularly suitable for complex multi-focal planes. This article summarizes the progress of the IRFPA process in the 2- to 14-μm spectral range and the best performance it can achieve. This paper reviews the scheme and progress of HgCdTe photodiode and silicon charge-coupled device integrated multi-dimensional two-dimensional mosaic array focal plane. Finally, the potential of HgCdTe IR charge transport inlayed focal plane was evaluated.