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利用反应射频磁控溅射技术,采用两步生长方法制备了ZnO薄膜,探讨了基片刻蚀时间和低温过渡层沉积时间对ZnO薄膜生长行为的影响.研究结果表明,低温ZnO过渡层的沉积时间所导致的薄膜表面形貌的变化与过渡层在Si(001)表面的覆盖度有关.当低温过渡层尚未完全覆盖基片表面时,ZnO薄膜的表面岛尺度较小、表面粗糙度较大,薄膜应力较大;当低温过渡层完全覆盖Si(001)基片后,ZnO薄膜的表面岛尺度较大、表面粗糙度较小,薄膜应力较小.基片刻蚀时间对薄膜表面形貌的影响与低温过渡层的成核密度有关.随着刻蚀时间的增加,ZnO薄膜的表面粗糙度逐渐下降,表面形貌自仿射结构的关联长度逐渐减小.
ZnO thin films were prepared by reactive RF magnetron sputtering with two-step growth method and the effects of substrate etching time and deposition time of low temperature transition layer on the growth behavior of ZnO thin films were investigated.The results show that the deposition time of low temperature ZnO transition layer The results show that the surface morphology of the ZnO thin film is related to the coverage of the Si (001) surface of the transitional layer.When the low temperature transition layer has not completely covered the surface of the substrate, the surface of the ZnO thin film has a smaller island scale and a larger surface roughness, When the low temperature transition layer completely covers the Si (001) substrate, the surface of the ZnO thin film has a large island scale, a small surface roughness and a small stress on the film. The influence of the etching time of the substrate on the surface morphology of the film Which is related to the nucleation density of low temperature transition layer.With the increase of etching time, the surface roughness of ZnO thin films decreases gradually and the correlation length of the surface morphology from the affine structure decreases gradually.