报告了高分辨率N型HPGe同轴探测器的研制结果;在固定的离子能量,束流密度和注入角度条件下,研究了探测器外侧P-N结的反向V-I_L特性与注入剂量的关系。实验结果证明,较高注入剂量可以稳定地得到好的探测器,当注入剂量达到1.8×10~(15)B~-/cm~2时,探 The results of the research on high-resolution N-type HPGe coaxial detector were reported. Under the conditions of fixed ion energy, beam density and implantation angle, the relationship between the inverted V-I_L characteristic and the injected dose of PN junction outside the detector . The experimental results show that the detector can be stably obtained at a higher implantation dose. When the implantation dose reaches 1.8 × 10 ~ (15) B ~ - / cm ~ 2,