研究了基片摆动和基片自转的磁控溅射系统中基片摆动角振幅和基片自转角速度对磁控溅射膜厚均匀性的影响。在理论分析的基础上,进行了铜膜溅射实验,实验结果和理论分析符合,在摆动角振幅为π/3弧度,自转角速度为π弧度/秒的条件下,于4英寸硅基片上得到了±5.6%的膜厚均匀性。 The effects of the amplitude of the substrate wobble and the angular velocity of the substrate on the thickness uniformity of the magnetron sputtering film were investigated in a magnetron sputtering system with substrate swings and substrate rotation. Based on the theoretical analysis, a copper film sputtering experiment was carried out. The experimental results were in good agreement with the theoretical analysis. The experimental results were obtained on a 4-inch silicon substrate under the condition of an oscillating angular amplitude of π / 3 radian and an angular rotation rate of π radian / second ± 5.6% of the film thickness uniformity.