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传统SiC干法刻蚀中普遍出现明显的微沟槽效应,对后续工艺以及SiC器件性能有重要影响。针对这一问题,采用SF6/O2/HBr作为刻蚀气体,对4H-SiC材料的电感耦合等离子体-反应离子刻蚀(ICP-RIE)进行了工艺条件的研究探索,分别研究了SF6,O2和HBr流量百分比对SiC刻蚀速率及微沟槽效应的影响。实验结果表明:SiC刻蚀速率随SF6和O2流量百分比的增加,先增大后减小。HBr气体作为SiC刻蚀的新型附加气体,在保护侧壁和降低微沟槽效应方面具有重要作用。在SF6,O2和HBr气体流量比为11∶2∶13时取得了较好的刻蚀结果,微沟槽效应明显降低,同时获得了较高的刻蚀速率,刻蚀速率达到536 nm/min。
The obvious micro-groove effect generally appears in the traditional dry etching of SiC, which has an important influence on the subsequent process and the performance of the SiC device. In order to solve this problem, SF6 / O2 / HBr is used as an etching gas to study the process conditions of inductively coupled plasma-reactive ion etching (ICP-RIE) of 4H-SiC material. Effect of HBr Flow Rate on SiC Etching Rate and Microtrope Effect. The experimental results show that the etching rate of SiC increases first and then decreases with the increase of SF6 and O2 flow rate. As a new type of additional gas for SiC etching, HBr gas plays an important role in protecting the sidewalls and reducing the effects of micro-grooves. A good etching result was obtained when gas flow ratio of SF6, O2 and HBr was 11:2:13, the micro-groove effect was obviously decreased and a higher etching rate was achieved at the same time, the etching rate reached 536 nm / min .