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对几何增强有效场强应用于肖特基接触从而提高碳膜场发射性能的机理进行了理论分析,介绍了一种有效而实用的平面线槽状排列几何模型,并将其与传统的密排型阵列微尖模型进行了比较.发现对比密排型阵列微尖模型,这种平面线槽状几何增强模型与肖特基接触结合后,场发射均匀性、电流密度、发射点密度等各项场发射指标都有很大改善.
Theoretical analysis is made on the mechanism of geometrical enhancement of effective field strength applied to Schottky contact to improve the field emission performance of carbon film. An effective and practical geometric model of planar wire groove arrangement is introduced and compared with the traditional close-packed Type array micro-tip model was contrasted.It was found that compared with dense-array micro-tip model, this flat-wire trench geometry enhanced model combined with Schottky contact, field emission uniformity, current density, Field emission indicators have greatly improved.