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探讨了用于彩色滤光片的低电阻和低压应力的ITO透明导电膜工艺。用磁控溅射方法在不同温度的衬底上制备了ITO薄膜。研究了膜形衬底温度与膜结晶化程度的关系,以及膜形衬底温度对膜电阻和压应力的影响。对不同衬底温度下形成的ITO薄膜进行了退火处理,并对退火后的ITO薄膜的电阻和压应力特性进行了分析。结果表明,采用室温沉积非晶态ITO膜,在真空退火下可获得低电阻、低压应力的多晶相ITO膜。
The low resistance and low pressure stress of ITO transparent conductive film used in color filter are discussed. ITO films were prepared on magnetron sputtering substrates at different temperatures. The relationship between the temperature of the film substrate and the degree of crystallization of the film and the influence of the film substrate temperature on the film resistance and the compressive stress were studied. The ITO films formed at different substrate temperatures were annealed and the resistance and compressive stress characteristics of the annealed ITO films were analyzed. The results show that polycrystalline ITO films with low resistance and low compressive stress can be obtained under vacuum annealing using amorphous ITO films deposited at room temperature.