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在GaP :V3 + 晶体中 ,对 3 A2 3 T1(F) ,3 A2 3 T1(P)以及3 A2 3 T2 (F) 3组自旋允许跃迁均已在实验中测得了它们的精细结构 .同时考虑静电、晶场和自旋 轨道耦合作用 ,计算了GaP :V3 + 的旋轨耦合分裂 ,理论计算与实验符合很好 .此外 ,还对这 3组自旋允许跃迁的精细结构进行了识别 ,结果表明 ,3 A2 3 T1(P)跃迁的 3条 13874,13890和 13946cm-1分别对应E′ T′2 ,T1′ 和A′;3 A2 3 T1(F)跃迁的 3条锐线86 97,8711和 876 0cm-1分别对应A′ T′2 ,E′ 和T1′;而3 A2 3 T2 (F)跃迁的 3条锐线 6 382 ,6 397和6 399cm-1则分别对应T′2 ,T1′ 和E′.
In GaP: V3 + crystals, the spin-allowed transitions of 3 A2 3 T1 (F), 3 A2 3 T1 (P) and 3 A2 3 T2 (F) Fine structure.At the same time considering electrostatic, crystal field and spin-orbit coupling, calculated spin-and-run coupling splitting of GaP: V3 +, the theoretical calculation is in good agreement with the experiment.In addition, The results show that the three 13874,13890 and 13946cm-1 of the 3 A2 3 T1 (P) transition correspond to E ’T’2, T1’ and A ’, respectively. The transition of 3 A2 3 T1 (F) The three sharp lines 86 97, 8711 and 876 0 cm -1 correspond to A ’T’2, E’ and T1 ’, respectively; whereas the 3 sharp lines 6 3 62, 6 397 and 6 399 cm of the 3 A2 3 T2 (F) -1 correspond to T’2, T1 ’and E’, respectively.