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日本精工—埃普森公司已用600℃以下的低温工艺制成9.5英寸多晶硅 TFT 液晶显示板。像素数为1140×1140,对比度为100:1以上。上下左右50度视角范围内,对比度10:1以上。TFT 采用多晶硅膜,是在600℃下,进行8小时热处理非晶硅(在550℃下形成)所形成的膜。减小造成图像质量下降的断开电流。首先把多晶硅膜厚度减薄到25nm,提高膜的阻抗值,再用 ECR-CVD 法在多晶硅膜上形成栅绝缘膜(SiO_2膜)以减小使断态电流增加的表
Japan’s Seiko - Epson company has used 600 ℃ below the low-temperature process 9.5 inches made of polycrystalline silicon TFT LCD panels. The number of pixels is 1140 × 1140 and the contrast is 100: 1 or more. Up and down about 50 degrees angle of view, the contrast ratio of 10: 1 or more. The TFT uses a polycrystalline silicon film and is a film formed by heat-treating amorphous silicon (formed at 550 ° C) for 8 hours at 600 ° C. Reduce the breaking current that causes the image quality to drop. First, the thickness of the polysilicon film is reduced to 25 nm, the resistance value of the film is increased, and then a gate insulating film (SiO 2 film) is formed on the polysilicon film by ECR-CVD to reduce the amount of off-state current