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设计并实现了一种高速大电流的开关驱动器,可用于驱动PIN开关以及IGBT开关等。开展了系统结构、电路和版图技术研究,并采用亚微米CMOS标准工艺进行设计和制造。通过采用一种带隙基准结构提供偏置的方式使电路兼容TTL和CMOS输入,保证良好的温度特性;通过采用传输门功率驱动电路实现三态控制,解决了高速应用时电容馈通效应问题。详细设计了TTL输入转换电路、基准和偏置电路、三态输出和功率驱动等电路;基于0.6μm CMOS工艺重点设计了高速驱动器中功率开关版图。该高速大电路开关驱动器产品的传输速度达到了25 ns,驱动电流达500 mA。
Design and implementation of a high-speed high-current switch driver can be used to drive PIN switches and IGBT switches. System architecture, circuit and layout techniques were studied and designed and fabricated using standard sub-micron CMOS processes. By adopting a bandgap reference structure to provide bias to make the circuit compatible with TTL and CMOS inputs, to ensure good temperature characteristics; through the use of transmission gate power drive circuit to achieve tristate control, solves the problem of high-speed capacitor feed-through effect. The TTL input conversion circuit, the reference and bias circuit, the three-state output and the power-driven circuit are designed in detail. The power switch layout in high-speed driver is designed based on 0.6μm CMOS technology. The high-speed, large-circuit switch driver delivers 25 ns of drive speed and 500 mA of drive current.