据报导,日本NEC公司开始出售两种高性能的超低噪声GaAsFET,型号为2SK406、407,作为大量生产的GaAsFET来说,其截止频率是世界上最高的,为60GHz。采用0.3μm的栅长,实现了低噪声化,在12GHz下,标准噪声为1.4dB,超过了现在的世界最高水平(1.7～1.8dB)。在1dB压缩时的输出功率为25mW。工艺上采用了“三层连续外延层形成技术”,形成高浓度低阻的GaAs漏源区,实现了器件的高性能化、性能均匀化和廉价化。此外,在 It is reported that Japan's NEC Corporation began selling two high-performance ultra-low-noise GaAsFET model 2SK406,407, as mass-produced GaAsFET, the cut-off frequency is the highest in the world at 60GHz. With a 0.3μm gate length, low noise is achieved. At 12GHz, the standard noise is 1.4dB, surpassing the highest level in the world (1.7 ~ 1.8dB). The output power at 1dB compression is 25mW. The process adopts a “three-layer continuous epitaxial layer formation technology” to form a GaAs drain source region with high concentration and low resistance, thereby realizing high performance, uniform performance and low cost of the device. In addition,