In this work,the homogenous thin films of sulfosalt Sn_4Sb_6S_(13) were successfully synthesized by the thermal evaporation technique onto corning 7059 glass substrates heated at various temperatures in the range of 30-200 ℃.The surface morphology and structural characteristics of Sn_4Sb_6S_(13) films were analyzed by atomic force microscopy,X-ray diffraction,and energy-dispersive X-ray,respectively.The X-ray diffraction analysis revealed that Sn_4Sb_6S_(13) thin films crystallized in monoclinic structure according to a preferential direction(6 11).An improvement in the structural properties by increasing the substrate temperature was observed.The values of some important parameters such as absorption coefficient(α),band gap(E_g),refractive index(n),extinction coefficient(k),and dielectric constant(ε_∞) of thin film were determined.The absorption coefficient was larger than 10~5 cm~(-1) in the visible range.The electron transition of Sn_4Sb_6S_(13)films was direct allowed with the values that decreased(2-1.69 eV) by increasing substrate temperature from 30 to 200 ℃.The dispersion data obeyed the single oscillator relation of the Wemple-DiDomenico model and Cauchy model.The electrical free carrier susceptibility and the carrier concentration of the effective mass ratio were estimated according to the model of Spitzer and Fan. In this work, the homogenous thin films of sulfosalt Sn_4Sb_6S_ (13) were successfully synthesized by the thermal evaporation technique onto corning 7059 glass substrates heated at various temperatures in the range of 30-200 ° C. The surface morphology and structural characteristics of Sn_4Sb_6S_ (13) ) films were analyzed by atomic force microscopy, X-ray diffraction, and energy-dispersive X-ray, respectively. X-ray diffraction analysis revealed that Sn_4Sb_6S_ (13) thin films crystallized in monoclinic structure according to a preferential direction Improvement in the structural properties by increasing the substrate temperature was observed. The values ​​of some important parameters such as absorption coefficient (α), band gap (E_g), refractive index (n), extinction coefficient (k), and dielectric constant (ε_∞) of thin film were determined. The absorption coefficient was larger than 10 ~ 5 cm -1 in the visible range.The electron transition of Sn_4Sb_6S_ (13) films was direct allowed with th e values ​​that decreased (2-1.69 eV) by increasing substrate temperature from 30 to 200 ° C. The dispersion data obeyed the single oscillator relation of the Wemple-DiDomenico model and Cauchy model. The electrical free carrier susceptibility and the carrier concentration of the effective mass ratio were estimated according to the model of Spitzer and Fan.