论文部分内容阅读
针对硅通孔(Through Silicon Via;TSV)高度、直径和绝缘层厚度三个结构参数建立了25种不同水平组合的HFSS仿真模型,获取了这25种TSV的回波损耗和插入损耗并进行了方差分析。结果表明:随信号频率升高,TSV最大表面电场强度和插入损耗减小而回波损耗增大;在置信度为99%时,TSV高度是影响回波损耗和插入损耗的显著性因素;TSV直径和绝缘层厚度对回波损耗和插入损耗影响均不显著;TSV高度对回波损耗和插入损耗影响最大,其次是TSV直径,最后是绝缘层厚度。
Twenty-five HFSS simulation models of different combinations of height, diameter and thickness of TSV were built and the return loss and insertion loss of the 25 kinds of TSVs were obtained. variance analysis. The results show that as the signal frequency increases, the maximum surface electric field intensity and insertion loss of TSV decrease and the return loss increases. TSV height is the significant factor affecting return loss and insertion loss at a confidence level of 99% The diameter and the thickness of the insulating layer have no significant effect on the return loss and the insertion loss. The TSV height has the greatest impact on the return loss and the insertion loss, followed by the TSV diameter and finally the thickness of the insulating layer.