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AZ4620是一种广泛应用于微系统制作的正性光刻胶。高温改性后的AZ4620在紫外曝光时光照部分不再发生光化学反应,基于这样的材料特性,以220℃高温硬烘30 min获得改性的无光敏性的光刻胶,通过Plasma氧刻蚀制作出底层结构,再在底层结构表面涂胶采用多次曝光和显影制作出具有三层微结构的光刻胶模具,利用模塑法制作聚合物PDMS芯片。对光刻胶高温硬固工艺进行分析,对产生回流、残余应力、气泡等问题进行理论分析和实验研究,优化了模具加工工艺。采用多次喷涂,Plasma氧处理改善浸润性,高温硬烘0.5℃/min的升温速率得到了质量较好的多层光刻胶模具,为利用正性厚胶制作多层微结构提供了新的方法。
AZ4620 is a positive photoresist that is widely used in microsystem fabrication. Based on the characteristics of such materials, the AZ4620 after being exposed to ultraviolet light is hardened for 30 minutes at a high temperature of 220 ° C to obtain a modified photo-sensitive photoresist, and the film is formed by plasma oxygen etching Out of the underlying structure, and then the bottom surface of the structure of the glue using multiple exposure and development to produce a three-layer microstructure of the photoresist mold, the use of molding polymer PDMS chip. The high-temperature hard-setting photoresist technology is analyzed, the backflow, residual stress, bubbles and other issues generated theoretical analysis and experimental study, to optimize the mold processing technology. Using multiple spraying, Plasma oxygen treatment to improve the wettability, high temperature hard baking 0.5 ℃ / min heating rate to get better quality multilayer photoresist mold, the use of positive thick plastic multi-layer micro-structure provides a new method.