Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：moxiaomi521

【摘要】

：

Self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (M

【作者】

：

WEIQuan－xiang NIUZhi－chuan

【机构】

：

Dept.ofPhys,Nat.Lab.forSuperlatticesandMicrostructures

【出处】

：

半导体光子学与技术：英文版

【发表日期】

：

2003年1期

【关键词】

：

量子点光致发光分子束外延法半导体 quantum dot molecular beam epitaxy photoluminescence

【基金项目】

：

国家自然科学基金，Projects of Nano-science Technology of Chinese Academy of Sciences

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Self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)1/(GaAs)1 monolayer deposition method. Photoluminescence (PL) measurement s

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Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots

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