论文部分内容阅读
采用低压金属有机气相外延 (LP MOCVD)设备生长并制作了 1 5 5 μmAlGaInAs InP偏振无关半导体光放大器 ,有源区为 3周期的张应变量子阱结构 ,应变量为 0 35 % ;器件制作成脊型波导结构 ,并采用 7°斜腔结构以有效抑制腔面反射 ;经蒸镀减反膜后 ,半导体光放大器的自发辐射功率的波动小于 0 3dB ,3dB带宽为 5 0nm ,半导体光放大器小信号增益近 2 0dB ,带宽亦为 5 0nm .在 1 5 30— 1 5 80nm波长范围内偏振灵敏度小于 0 5dB ,峰值增益波长的饱和输出功率达 7dBm ;器件增益随温度的升高而减小 ,当器件工作温度从 2 5℃升高至 6 5℃时 ,增益降低小于 3dB .
A 155 nm AlGaInAs InP Polarization Independent Semiconductor Optical Amplifier was grown and fabricated using a low-pressure metal-organic vapor phase epitaxy (LP MOCVD) device. The active region was a 3-period tensile strain quantum well structure with strain of 0 35% Waveguide structure, and the use of 7 ° oblique cavity structure to effectively suppress the cavity surface reflection; evaporation antireflection film, the semiconductor optical amplifier spontaneous emission power fluctuations of less than 0 3dB, 3dB bandwidth of 50nm, semiconductor optical amplifier small signal The gain is nearly 20 dB and the bandwidth is 50 nm. The polarization sensitivity is less than 0 5 dB in the wavelength range of 15 30-1 3580 nm and the saturation output power of the peak gain wavelength is 7 dBm. The gain of the device decreases as the temperature increases. When the device operating temperature is raised from 25 ℃ to 65 ℃, the gain decrease is less than 3dB.