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通过考虑迁移率和阈值电压随温度的变化关系,模拟分析了4H-SiCn-MOSFET高温下的电学特性,模拟结果与实验有较好的符合.并进一步讨论了主要结构参数和工艺参数对高温电特性的影响及其最佳取值.
The electrical characteristics of 4H-SiCn-MOSFET at high temperature were simulated and analyzed by considering the relationship between mobility and threshold voltage with temperature, and the simulation results were in good agreement with the experimental results. Furthermore, the effects of main structural parameters and process parameters on high temperature Characteristics of the impact and its best value.