采用射频磁控溅射法在单晶Si(100)表面制备了非晶态SiC薄膜,并于真空热处理炉中进行(800～1200)℃×1h退火处理。通过X射线衍射、扫描电镜以及摩擦磨损试验研究了退火温度对薄膜结构、表面形貌以及性能的影响。结果表明,退火温度在800℃以上薄膜结构开始发生明显的晶态转变,在1000℃时薄膜主要结构为3C-SiC,且薄膜表面晶粒细小、致密,摩擦系数约为0.2。在1200℃退火时,薄膜为混晶结构,且薄膜晶粒明显粗化。 An amorphous SiC thin film was prepared on the surface of single crystal Si (100) by RF magnetron sputtering and annealed at 800-1200 ℃ for 1h in a vacuum heat treatment furnace. The effects of annealing temperature on the structure, surface morphology and properties of the films were investigated by X-ray diffraction, scanning electron microscopy and friction and wear tests. The results show that the microstructure of the film begins to change obviously when the annealing temperature is above 800 ℃. The main structure of the film is 3C-SiC at 1000 ℃. The surface of the film is small and dense with a friction coefficient of about 0.2. When annealed at 1200 ℃, the film is a mixed crystal structure, and the crystal grains of the film are obviously roughened.