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C_(60)field-effect transistor (OFET) with a mobility as high as 5.17 cm 2 /V·s is fabricated.In our experiment,an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared.The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode.By analysing the C_(60) film with atomic force microscopy and X-ray diffraction techniques,it is shown that the pentacene passivation layer can contribute to C_(60) film growth with the large grain size and significantly improve crystallinity.Moreover,the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C_(60) film efficiently.
C_ (60) field-effect transistor (OFET) with a mobility as high as 5.17 cm 2 / V · s is fabricated.In our experiment, an ultrathin pentacene passivation layer on poly- (methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen) / Ag bilayer electrode are prepared.The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode.By anysysing the C_ (60) film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C 60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C 60, film efficiently.