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采用脉冲法生长了200nm厚的AlN薄膜,其XRD摇摆曲线的半高宽为130arcsec,表面粗糙度为2.021nm。以此AlN层为基板生长了不同Al组分的AlGaN薄膜,高分辨率XRD测试发现,随Al组分的增加,AlN基板层对AlGaN薄膜施加的压应力增大,同时,AlGaN薄膜在生长合并过程中产生的张应力也增大。在Al组分为0.67时,发现这两种应力处于一种平衡的状态,此时的AlGaN薄膜有最优的结晶质量。
A 200nm-thick AlN thin film was grown by pulse method. The half-width of the XRD rocking curve was 130arcsec and the surface roughness was 2.021nm. AlGaN thin films with different Al composition were grown on the AlN layer. The high-resolution XRD results showed that the compressive stress on the AlGaN thin films increased with the increase of Al composition. Meanwhile, The tensile stress generated in the process also increases. When the Al composition is 0.67, it is found that the two stresses are in a state of equilibrium, and the AlGaN film has an optimal crystal quality at this time.