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以等离子化学汽相、低温沉积氮化硅、二氧化硅时,氢以Si-H键、Si-OH键或N-H键的形式存在于膜层中。氢的含量对膜层的结构、腐蚀速率、应力、折射率、防潮、抗划痕等性质都会产生明显的影响。近年来,用红外吸收(透过)光谱、红外多次反射光谱、傅里叶转换红外光谱、二次离子质谱、核实验技术等测定膜层中氢的含量,国外已有不少报导。本文对以上分析方法进行了简要的综述。文中还介绍了应用傅里叶转换红外光谱测定300℃辉光放电淀积氮化硅膜层的氢含量,其结果均在3.6～7× 10~(21)H/cm~3,与核实验技术测定结果相吻合。
In the plasma chemical vapor phase, silicon nitride and silicon dioxide are deposited at low temperature in the form of Si-H bonds, Si-OH bonds or N-H bonds. Hydrogen content of the film structure, corrosion rate, stress, refractive index, moisture, scratch and other properties will have a significant impact. In recent years, the infrared absorption (transmission) spectroscopy, infrared multi-reflectance spectroscopy, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, nuclear test techniques to determine the hydrogen content of the film has been reported in many foreign countries. This article gives a brief overview of the above analysis methods. The hydrogen content of silicon nitride film deposited by 300 ℃ glow discharge deposition was also measured by Fourier transform infrared spectroscopy (FTIR). The results were in the range of 3.6 ~ 7 × 10 ~ (21) H / cm ~ 3. Technical measurement results match.