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设计并制备了一种Si基单片集成850nm光接收芯片,包括“P+/N-EPI/BN+”结构的光电探测器(PD)、跨阻前置放大电路及其后续处理电路。分析了PD的结构,并对其光谱响应及频率响应进行模拟,在2.0V偏压下,PD在850nm的响应度为0.131A/W,截止频率为400 MHz。采用0.5μm BCD(bipolar、CMOS和DMOS)工艺流片,光接收芯片面积约为900μm×1 100μm。测试结果表明,PD暗电流为pA量级,响应度为0.12A/W。光接收芯片在155 Mb/s速率及误码率(BER)小于10-9情况下,灵敏度为-12.0dBm;在622 Mb/s速率及BER小于10-9情况下,灵敏度为-10.0dBm,并能得到清晰的眼图。将该光接收芯片封装后接入光接收模块,进行点对点光互联实验,获得很好的光信号通路。
A Si-based monolithic integrated 850nm optical receiver chip is designed and fabricated, including a photodetector (PD) with “P + / N-EPI / BN +” structure, a transimpedance preamplifier circuit and its subsequent processing circuits. The structure of PD was analyzed and its spectral response and frequency response were simulated. The PD response at 850 nm was 0.131 A / W at 2.0 V bias and the cutoff frequency was 400 MHz. Using 0.5μm BCD (bipolar, CMOS and DMOS) process flow chip, the light-receiving chip area of about 900μm × 1 100μm. The test results show that PD dark current is on the order of pA, and the responsivity is 0.12A / W. The light-receiving chip has a sensitivity of -12.0dBm at a rate of 155 Mb / s and a BER of less than 10-9, a sensitivity of -10.0dBm at a rate of 622 Mb / s and a BER of less than 10-9, And get a clear eye diagram. After the light receiving chip is encapsulated, the optical receiving module is connected to the light receiving module for point-to-point optical interconnection experiments to obtain a good optical signal path.