分子束外延的特点及在场效应晶体管中的应用分子束外延(MBE)自问世以来,已经过了六年,现在已由萌芽初期发展到成熟阶段。分子束外延像在许多报导中介绍的那样,是真空蒸发的一种。然而在超高真空中(<10~(-9)乇),通过精确地进行生长制控,可获得与液相或汽相晶体同等质量的生长层。此外,MBE 还具有膜厚控制精确、容易的突出优点。图1示出了 MBE 的特点及其用它制备器件的流程图。由图可知,产生上述优点的根本原因是由于膜的生长是由在超高真空中飞散着的蒸发物本身 Molecular Beam Epitaxy and Its Applications in Field-Effect Transistors Molecular beam epitaxy (MBE) has been around for six years since it was first published and has now grown from its infancy to its mature stage. Molecular beam epitaxy, as described in many reports, is a type of vacuum evaporation. However, in the ultra-high vacuum (<10 -9 Torr), growth control can be performed precisely and the same quality as the liquid or vapor phase crystal growth can be obtained. In addition, MBE also has the film thickness control accuracy, easy to highlight the advantages. Figure 1 shows the characteristics of the MBE and the flowchart of the device used to make it. It can be seen from the figure that the fundamental reason for the above advantages is that the growth of the membrane is caused by the evaporation itself flying in the ultra-high vacuum