The average bond energy method is popularized and applied to study band offsets at strained layer heterojunctions. By careful examination of hydrostatic and uniaxial strain actions on the band offset parameter E_(mv),it is found that the average band offset parameter E_(mv,av)=E_m-E_(v, av) remains basically unchanged under different strain conditions. Therefore, provided the band offset parameter before strain E_(mv,0) of bulk material is calculated, and the experiment values of deformation potential b and spin-orbit (SO) splitting energy △_0 are quoted, the E_(mv) at strained layer can be obtained by a simple and convenient algebraic calculation. Thus the valence band offset　△E_v at strained layer heterojunction can also be predicted conveniently. This simplified calculation method is characterized by decreased calculation amount and increased conviction due to use as many as possible the experiment values. The average bond energy method is popularized and applied to study band offsets at strained layer heterojunctions. By careful examination of hydrostatic and uniaxial strain actions on the band offset parameter E_ (mv), it is found that the average band offset parameter E_ (mv, Thus, provided the band offset parameter before strain E_ (mv, 0) of bulk material is calculated, and the experiment values ​​of deformation potential b and spin Thus, the valence band offset ΔE_v at strained layer heterojunction can also be predicted conveniently. This simplified version of the valence band offset ΔE_v at strained layer can also be predicted conveniently. calculation method is characterized by decreased calculation amount and increased conviction due to use as many as possible the experiment values.