提出了基于垂直层叠结构的双波段传感器,该结构为同时对可见波段和近红外波段进行成像提供了可能。它的基本原理是利用不同波长的光在硅材料中穿透深度的非线性分布,即:短波长的可见光主要在表面被吸收,长波长的近红外光则主要在更深的位置被吸收。通过垂直层叠结构,抽取不同深度的光生载流子,即可以得到相应波段的成像信息。数值仿真分析表明,结构参量为D1=2μm,D2=18μm的结构能在400~1200 nm波长范围得到响应峰值波长为550 nm和1000 nm的最佳可见/近红外响应。 A dual-band sensor based on a vertical stack structure is proposed, which provides the possibility of imaging the visible and near infrared bands simultaneously. Its basic principle is the use of different wavelengths of light in silicon material penetration depth of non-linear distribution, namely: the short wavelength of visible light is mainly absorbed in the surface, long-wavelength near-infrared light is mainly absorbed in a deeper position. Through the vertical stack structure, the extraction of optical carriers of different depths, you can get the corresponding band of imaging information. Numerical simulation shows that the structures with D1 = 2μm and D2 = 18μm can obtain the best visible / near-infrared response at peak wavelengths of 550 nm and 1000 nm in the wavelength range from 400 to 1200 nm.