简述氢气还原氯化钽化学气相沉积钽(CVD)的主要原理,研究氯化、氯气流量、氢气流量和沉积温度4个参数对沉积速率及沉积层显微组织的影响。结果表明:氯化温度对沉积速率的影响最小,沉积温度的影响最大;显微组织由小晶粒区和柱状晶区组成,沉积参数改变,柱状晶晶粒大小发生变化。 The main principle of hydrogen reduction tantalum chloride chemical vapor deposition tantalum (CVD) is briefly introduced. The effects of four parameters of chloride, chlorine flow rate, hydrogen flow rate and deposition temperature on the deposition rate and the microstructure of the deposit are studied. The results show that the temperature of chlorination has the least influence on the deposition rate and the deposition temperature has the greatest influence on the deposition rate. The microstructure consists of small grains and columnar grains, the deposition parameters change and the size of the grains changes.