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本文实验装置使用1.5～2MHz高频振荡器,在低氧压下辉光放电产生氧等离子体对GaAs进行自体氧化。观察了高频电场、阳极偏压、加热温度等条件对氧化速度、氧化物均匀性等的影响,分析了氧化物的结构与组成及电性能,园满地制备出大面积GaAs自体氧化物。 所用GaAs样品为:n型<100>晶向,N_d≈10~(17)cm~(-3),φ35圆片。晶片由机械-化学抛光后溶剂脱蜡,再用H_2SO_4:H_2O_2:H_2O=4:1:1(体积)溶液腐蚀,冷、热去离子水漂洗。 在阳极偏压+45V,加热温度170℃时氧化速度为120[A/分],氧化物折射率为1.83～1.85(波长6328A),电阻率大于10~(15)Ω·cm,击穿电场强度 为±10~6V·cm~(-1),给出了MOS C-V,I-V特性,电子衍射图和俄歇电子能谱分析结果。
In this paper, a 1.5 ~ 2MHz high-frequency oscillator was used in the experiment device to generate self-oxidation of GaAs by oxygen plasma under low oxygen pressure. The effects of high frequency electric field, anode bias voltage and heating temperature on the oxidation rate and oxide homogeneity were observed. The structure and composition of the oxide and the electrical properties of the oxide were analyzed. Large area GaAs self-oxides were prepared. GaAs samples used are: n <100> orientation, N_d≈10 ~ (17) cm ~ (-3), φ35 wafer. The wafers were dewaxed by mechanical-chemical polishing and then corroded with a H 2 SO 4: H 2 O 2: H 2 O 4: 1: 1 (volume) solution, rinsed with cold and hot deionized water. The oxidation rate is 120 [A / min] at anodic bias of + 45V and heating temperature of 170 ℃, the refractive index of oxide is 1.83-1.85 (wavelength 6328A), the resistivity is more than 10-15 Ω · cm, The intensity is ± 10 ~ 6V · cm ~ (-1), and the MOS CV, IV characteristics, electron diffraction and Auger electron spectroscopy analysis are given.