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针对集成电路注入设备对等离子体大面积、高密度和良好均匀性的要求,利用CFD-ACE仿真软件对1500 mm×1500 mm大面积感应耦合等离子体腔室做了多物理场综合仿真。利用正交实验法对等离子体腔室结构和工艺参数进行仿真优化,得到了能够产生高密度均匀的等离子体优化参数。对参数优化后的等离子体腔室做了仿真分析,结果表明腔室中气体流速会受到电极卡盘上方线圈的扰动。另外仿真发现腔室中电极卡盘上方等离子体密度具有整体分布均匀,但是边缘部分出现等离子体密度陡变的特点。分析原因为工艺气体的扰动以及电极卡盘边缘上表面和侧面对等离子体双重复合两方面的影响。
In order to meet the requirements of large area, high density and good uniformity of plasma in integrated circuit (IC) injection equipment, CFD-ACE simulation software is used to simulate a 1500 mm × 1500 mm large area inductively coupled plasma chamber. The plasma chamber structure and process parameters were simulated and optimized by using orthogonal experiment method, and the plasma optimization parameters with high density and uniformity were obtained. The simulation results of the optimized plasma chamber show that the flow rate of gas in the chamber is disturbed by the coil above the electrode chuck. In addition, the simulation shows that the plasma density above the electrode chuck in the chamber is evenly distributed, but the edge of the plasma density changes sharply. The reasons for the analysis were the effects of process gas perturbations and the double recombination of plasma on the surface and side of the electrode chuck edge.