论文部分内容阅读
研究了硼烷 (B2 H6 )掺杂锗硅外延和磷烷 (PH3)掺杂硅外延的外延速率和掺杂浓度与掺杂气体流量的关系 .B浓度与 B2 H6 流量基本上成正比例关系 ;生长了 B浓度直至 10 1 9cm- 3的多层阶梯结构 ,各层掺杂浓度均匀 ,过渡区约 2 0 nm,在整个外延层 ,Ge组分 (x=0 .2 0 )均匀而稳定 .PH3掺杂外延速率随 PH3流量增加而逐渐下降 ;P浓度在 PH3流量约为 1.7sccm时达到了峰值 (约 6× 10 1 8cm- 3) .分别按 PH3流量递增和递减的顺序生长了多层结构用以研究 PH3掺杂 Si外延的特殊性质
The relationship between the epitaxial growth rate and doping concentration of B2 H6 doped SiGe epitaxy and Phosphine (PH3) doped Si epitaxy and doping gas flow rate was studied.B concentration was in direct proportion to B2 H6 flow rate. The multi-layer stepped structure with B concentration up to 1019cm-3 was grown. The doping concentration of each layer was uniform and the transition region was about 20 nm. The Ge composition (x = 0.200) was uniform and stable throughout the epitaxial layer. PH3 doping rate gradually decreased with the increase of PH3 flow rate; P concentration peaked at about 1.7sccm PH3 flow rate (about 6 × 1018 cm-3) The structure is used to study the special properties of PH3-doped Si epitaxy