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SiC热氧化时由于C元素的存在及其诱生的空位型缺陷,影响SiO2层的质量、SiO2/SiC界面及SiC MOS器件的击穿特性。采用红外光谱技术研究了6H-SiC上热氧化生长的SiO2层,分析和讨论了SiO2氧化层及界面态的红外反射特征峰,对偏振入射光与SiO2振动模的相互作用进行了分析。对C元素的红外光谱学表征进行了初步研究,从而为工艺中对SiO2层中C元素的实时检测和进一步改善SiC MOS器件电学特性的研究打下基础。
SiC thermal oxidation due to the presence of C elements and its induced vacancy defects affect the quality of the SiO2 layer, SiO2 / SiC interface and breakdown characteristics of SiC MOS devices. Infrared spectroscopy was used to study the thermal oxidation growth of SiO2 layer on 6H-SiC. The infrared reflection characteristic peak of SiO2 oxide layer and interfacial state was analyzed and discussed. The interaction between polarized incident light and SiO2 vibration mode was analyzed. The infrared spectroscopic characterization of C element has been carried out a preliminary study, which laid the foundation for the real-time detection of C element in the SiO2 layer and the further improvement of the electrical characteristics of SiC MOS device.