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本文对Mo/Al/Mo作为TFT-LCD器件源/漏极的TFT特性进行了研究。与单层Mo相比,存在沟道界面粗糙,I_(off)偏大问题,通过优化膜层结构,改善界面状态,得到了平整的沟道界面和良好的TFT特性。增加Bottom Mo的厚度,可以有效减少Al的渗透,防止Al-Si化合物的形成,得到界面平整的沟道;N~+刻蚀后SF6处理对特性影响不大,增加刻蚀时间可以使I_(on)和I_(off)同时降低;PVX沉积前处理气体N_2+NH_3与H_2区别不大,都可以减少沟道缺陷,而增加H_2处理时间会增强等离子的轰击作用,减少了沟道表面Al-Si化合物,但处理时间过长可能会使沟道缺陷增加;采用bottom Mo加厚,N~+刻蚀以及PVX沉积前处理等最优条件,可以得到沟道界面良好,TFT特性与单层Mo相当的TFT器件。
In this paper, the characteristics of Mo / Al / Mo as TFT-LCD device source / drain TFT were studied. Compared with the single-layer Mo, the channel interface is rough and the I-off is large. By optimizing the film structure and improving the interface state, a smooth channel interface and good TFT characteristics are obtained. Increasing the thickness of Bottom Mo can effectively reduce the infiltration of Al and prevent the formation of Al-Si compounds, resulting in a channel with a smooth interface; SF6 treatment has little effect on the properties after N + + etching. Increasing the etching time can make I_ ( On) and Ioff (off) decrease at the same time. The difference between the pretreatment gas N_2 + NH_3 and H_2 before PVX deposition can reduce the channel defects, while increasing the H_2 treatment time enhances the plasma bombardment and reduces the Al- Si compound, but the processing time is too long may make the channel defects increase; bottom Mo thickened, N ~ + etching and PVX deposition pretreatment and other optimal conditions, the channel interface can be good, TFT characteristics and monolayer Mo Equivalent TFT device.