A 1.34 GHz±60 MHz low noise amplifier(LNA) designed in a 0.35 μm SiGe process is presented.The designed LNA exhibits a power gain of 21.46 dB and a noise figure(NF) of 1.27 dB at 1.34 GHz.The linearity is improved with an active biasing technique.The post-layout simulation shows an input referred 1-dB compression point(IP1dB) of -11.52 dBm.Compared with the recent reported high gain LNAs,the proposed LNA has a much better linearity without degrading other performance.The LNA draws 10 mA current from a 3.3 V power supply. A 1.34 GHz ± 60 MHz low noise amplifier (LNA) designed in a 0.35 μm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz.The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IP1 dB) of -11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply.