Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias volt

来源 :中国有色金属学会会刊(英文版) | 被引量 : 0次 | 上传用户:xingke198621
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The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology,X-ray diffraction (XRD),RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth,making the growth of the high quality diamond film easier and cheaper than using other methods.
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