论文部分内容阅读
安森美半导体日前推出8款新型N沟道和P沟道、低压沟道MOSFET。这些器件降低了漏极和源极之间的电阻(RDS(on)),整体电源电路效率比其他同类封装的解决方案提高30%。
ON Semiconductor has introduced eight new N-channel and P-channel, low-voltage channel MOSFET. These devices reduce the drain-to-source resistance (RDS (on)), and the overall power supply circuit efficiency is up to 30% more efficient than other packaged solutions.