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研制了一种新型高速溅射磁性材料靶，即间隙型靶（ＧＴ 靶）．ＧＴ靶上有许多与装在阴极中的永磁体所产生的磁通相切割的窄间隙。所以，靶材料无需达到磁饱和，在靶表面上便泄漏出磁控溅射所必须的磁通。使用这种ＧＴ靶，即使用一般的永磁体也能实现磁性材料的高速溅射．例如，在１０－２～１．０巴的氩气在下，用１５瓦／厘米２的功率密度，直流溅射２０ｍｍ厚的铁靶，获得了１．５μｍ／ｍｉｎ的淀积率。
A new high-speed sputtered magnetic target has been developed, namely a gap target (GT target). There are many narrow gaps in the GT target that cut the flux generated by the permanent magnets housed in the cathode. Therefore, the target material does not need to be magnetically saturated, and the magnetic flux necessary for magnetron sputtering is leaked from the target surface. With this GT target, high-speed sputtering of magnetic materials can be achieved even with ordinary permanent magnets. For example, a 20 mm thick iron target was sputtered by direct current sputtering at a power density of 15 watts / cm 2 with an argon gas of 10-2 to 1.0 bar down to a deposition rate of 1.5 μm / min.