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随着半导体技术的发展,Si基体上生长的高介电常数的钙钛矿晶体氧化物薄膜如SrTiO3(STO)也受到了广泛关注。SrTiO3(a=0·3905nm)在沿Si(001)方向旋转45℃之后和Si(d=0·384nm)之间的点阵错配很小(~1·7%),同时也有各种晶体氧化物薄膜在Si基体上生长很好的缓冲材料。本文主要利用
With the development of semiconductor technology, high dielectric constant perovskite crystalline oxide films grown on Si substrates, such as SrTiO3 (STO), have also attracted much attention. The lattice mismatch between SrTiO3 (a = 0 · 3905 nm) and Si (d = 0.384 nm) after rotation in the Si (001) direction at 45 ° C. is very small (~ 1.7%), Oxide films grow well on Si substrates. This article mainly use