介绍了在SF6气体环境下由不同脉冲能量的飞秒激光在硅表面蚀刻出的尖峰结构的变化。其中,硅表面形成的尖峰高度先是随脉冲能量的升高而增加,然而当脉冲能量增加到一定程度时,脉冲能量的继续升高却会导致尖峰高度的降低。尖峰高度在开始阶段的增加是由于激光的消融作用;而过高的能量在前几百个脉冲入射后无法穿透到硅材料深处,聚集在硅表面的能量除了引发最外层的硅材料的飞溅,还使次外层的硅一直处于熔融状态,这种状态阻碍了尖峰结构的形成,即使后继能量顺利导入内部,但由于前一部分脉冲对尖峰结构的形成并无贡献,因此表面的尖峰高度反而有所降低。 The change of the spike structure etched on the silicon surface by the femtosecond laser with different pulse energies under SF6 gas environment is introduced. Among them, the spike height of the silicon surface first increases with the increase of the pulse energy, however, when the pulse energy is increased to a certain extent, the continuous increase of the pulse energy will lead to the decrease of the spike height. The increase in peak height at the beginning is due to ablation of the laser; while excessive energy can not penetrate deep into the silicon material after the first few hundred impulses, the energy accumulated on the silicon surface, in addition to the outermost layer of silicon material Spatter, but also the outer layer of silicon has been in a molten state, which hindered the formation of spike structure, even if the succession of energy smoothly into the interior, but because the first part of the pulse does not contribute to the formation of spike structure, the surface spikes But the height has decreased.