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本文从晶体管饱和状态下的载流子分布与外部电流的关系出发,分析了合金管饱和区的直流特性;结果说明,在同样的集电极与基极电流比值下,在大电流情况的饱和压降将比小电流情况大一倍以上,这说明了Moll的饱和压降表达式在大电流情况误差大至一倍的原因。分析的结果,不论在小电流或大电流情况均与实验测量结果符合很好。分析结果说明了Miller所提出的测量发射极串联电阻的方法所测得的结果,对合金管来说,实际上不是发射极串联电阻,而主要是基极层纵向电阻和少子与多子迁移率比值的乘积,还包括基极层横向电阻的影响。分析结果还说明,对合金管从降低饱和压降的观点来说,集电极面积的多余部分(即集电极与基极重迭部分),在保持足够的电流放大系数下,应尽可能地减小。 最后对台面类型的晶体管在饱和状态下的特性也进行了计算,并与实测结果作了比较。计算结果可以用来分析台面类型晶体管饱和压降各有关因素的贡献,同时也可用来准确地测量集电极串联电阻等有关参数。
Based on the relationship between the carrier distribution and the external current in the saturated state of the transistor, the DC characteristics of the saturated region of the alloy tube are analyzed. The results show that under the same collector-base current ratio, the saturation voltage Drop will be more than twice as small as the case of small current, which explains the reason why Moll’s saturation voltage drop expression greatly doubles the error in high current conditions. The result of the analysis is in good agreement with the experimental measurements both in the case of small current and in large current. The results of the analysis show the results of Miller’s proposed method of measuring emitter series resistance, which is not actually emitter series resistance for the alloy tube but mainly the longitudinal resistance of the base layer and the minority-and multi-molecular mobility The product of the ratios also includes the effect of the lateral resistance of the base layer. The analysis also shows that for the alloy tube, from the point of view of reducing the saturation voltage drop, the excess area of the collector (ie, the collector and the base overlap) should be reduced as much as possible while maintaining a sufficient current amplification factor small. Finally, the characteristics of the mesa-type transistors under saturation are also calculated and compared with the measured results. The calculation result can be used to analyze the contribution of each factor related to the saturation voltage drop of the mesa type transistor, and can also be used to accurately measure the collector series resistance and other related parameters.