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在分子束外延生长高质量的CdTe/Si复合衬底上,分别通过MBE和LPE技术成功地研制出Hg1-xCdxTe/CdTe/Si红外探测器所需的重要红外半导体材料。利用傅里叶变换红外光谱仪对Hg1-xCdxTe/CdTe/Si红外半导体材料的红外透射光谱进行测试分析且计算薄膜厚度,并配合扫描电子显微镜对其厚度计算分析进行校正,最终获得一种无破坏、无污染、快捷方便的多层膜厚度测试方法。
The important infrared semiconductor materials required for the Hg1-xCdxTe / CdTe / Si infrared detector were successfully developed by MBE and LPE respectively on the high quality CdTe / Si composite substrate grown by molecular beam epitaxy. The infrared transmission spectrum of Hg1-xCdxTe / CdTe / Si infrared semiconductor was tested and analyzed by Fourier transform infrared spectrometer, the film thickness was calculated, and its thickness was calculated by scanning electron microscope. Finally, a non-destructive, Pollution-free, quick and easy multi-layer film thickness test method.