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用GSMBE（GasSourceMolecularBeamEpitaxy）技术在国内首次研究了应变Si1-xGex／Si异质结材料的生长．并用X射线双晶衍射技术对样品进行了测试分析．对于Si(0.91)Ge(0．09)和Si(0.86)Ge(0.14)单层，其半宽度FWHM分别为100”和202”；对于Si(0.89)Ge(0.11)／Si多量子阱，其卫星峰多达15个以上．三种样品中的GeSi外延层干涉条纹清晰可见．结果表明，用GSMBE技术生长的Si1-xGex／Si异质结材料具有很好的结晶质量以及陡峭的界面．
The growth of strained Si1-xGex / Si heterojunction materials was firstly studied in China with GSMBE (Gas Source Molecular Beam Epitaxy) technology. The samples were analyzed by X-ray double crystal diffraction. The half-width FWHM of the monolayer is 100 “and 202” for Si (0.91) Ge (0.09) and Si (0.86) Ge (0.14) monolayers, respectively; Its satellite peak as many as 15 or more. The GeSi epitaxial layer interference fringes in the three samples are clearly visible. The results show that the Si1-xGex / Si heterostructure materials grown by GSMBE have good crystalline quality and steep interface.