论文部分内容阅读
为了获得低阈值连续波工作太赫兹源,采用固源分子束外延技术生长了Ga As/Al Ga As束缚态向连续态跃迁的太赫兹量子级联激光器(QCL)有源区,基于半绝缘-等离子体波导工艺制作了太赫兹量子级联激光器。获得了激光器(腔面未镀高反射膜)的发射光谱和相应的输出特性等性能,其中器件在10 K工作温度、350 m A激励电流下的中心频率为2.93 THz,连续波工作模式的阈值电流密度为156 A/cm2,器件的最大光输出功率为7.84 m W,最高工作温度为62 K。
In order to obtain the THz source with low threshold continuous wave, a solid state source molecular beam epitaxy was used to grow the active region of GaAs / Al GaAs bound state to continuous state transition terahertz quantum cascade laser (QCL) THz Quantum Cascade Lasers Made by Plasma Waveguide Technology. The emission spectra and the corresponding output characteristics of the laser were obtained. The center frequency of the device at 10 K working temperature and 350 m A excitation current was 2.93 THz. The threshold of continuous mode operating mode The current density of 156 A / cm2, the maximum optical output power of the device is 7.84 mW, the maximum operating temperature of 62 K.