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提出了一种新的1.3μm InGaAsP行波半导体激光放大器封装结构。由于采用脉冲激光焊接技术定位焊接耦合光纤,并优化了焊接工艺获得了良好的对准长期稳定性。
A new 1.3μm InGaAsP traveling wave semiconductor laser amplifier package structure is proposed. Due to the pulsed laser welding technology for positioning soldered coupling fibers and optimizing the soldering process, good long-term alignment is achieved.